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gsot03c-ht3 to gsot36c-ht3 document number 85825 rev. 1.7, 21-apr-08 vishay semiconductors www.vishay.com 1 20237 1 2 3 20514 1 for technical support, please contact: esd-protection@vishay.com two-line esd-protection in llp75 features ? two-line esd-protection device ? esd-immunity acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? space saving llp package ? lead (pb)-free component ? lead finish = "e3" = matte tin (sn) ? non-magnetic ? "green" molding compound ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec marking (example only) dot = pin 1 marking xx = date code yy = type code (see table below) ordering information package data 21001 xx yy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity gsot03c-ht3 gsot03c-ht3-gs08 3000 15000 gsot04c-ht3 gsot04c-ht3-gs08 3000 15000 gsot05c-ht3 GSOT05C-HT3-GS08 3000 15000 gsot08c-ht3 gsot08c-ht3-gs08 3000 15000 gsot12c-ht3 gsot12c-ht3-gs08 3000 15000 gsot15c-ht3 gsot15c-ht3-gs08 3000 15000 gsot24c-ht3 gsot24c-ht3-gs08 3000 15000 gsot36c-ht3 gsot36c-ht3-gs08 3000 15000 device name package name marking code weight molding compound flammability rating moisture sensitivity level soldering conditions gsot03c-ht3 llp75-3b 03 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gsot04c-ht3 llp75-3b 04 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gsot05c-ht3 llp75-3b 05 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gsot08c-ht3 llp75-3b 08 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gsot12c-ht3 llp75-3b 12 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gsot15c-ht3 llp75-3b 15 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gsot24c-ht3 llp75-3b 24 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gsot36c-ht3 llp75-3b 36 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals e3
www.vishay.com 2 document number 85825 rev. 1.7, 21-apr-08 gsot03c-ht3 to gsot36c-ht3 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com absolute maximum ratings gsot03c-ht3 gsot04c-ht3 gsot05c-ht3 rating te s t c o n d i t i o n symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 369 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 504 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c rating te s t c o n d i t i o n symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 429 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 564 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c rating te s t c o n d i t i o n symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 480 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 612 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
gsot03c-ht3 to gsot36c-ht3 document number 85825 rev. 1.7, 21-apr-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: esd-protection@vishay.com gsot08c-ht3 gsot12c-ht3 gsot15c-ht3 rating test condition symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 18 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 18 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 345 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 400 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c rating test condition symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 12 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 12 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 312 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 337 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c rating test condition symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 8a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 8a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 230 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 245 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com 4 document number 85825 rev. 1.7, 21-apr-08 gsot03c-ht3 to gsot36c-ht3 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com gsot24c-ht3 gsot36c-ht3 rating te s t c o n d i t i o n symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 5a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 5a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 235 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 240 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c rating te s t c o n d i t i o n symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 3.5 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 3.5 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 248 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 252 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
gsot03c-ht3 to gsot36c-ht3 document number 85825 rev. 1.7, 21-apr-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: esd-protection@vishay.com bias -mode (2-line bi directional as ymmetrical protection mode) with the gsotxxc-ht3 two signal- or data-lines (l1, l2) can be protected against voltage transients. with pin 3 connected to ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. as long as the voltage level on the data- or signal-line is between 0 v (ground level) and the specified m aximum r everse w orking v oltage (v rwm ) the protection diode between pin 2 and pin 3 and between pin 1 and pin 3 offer a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. now the protection device behaves like a closed switch. the c lamping v oltage (v c ) is defined by the br eakthrough v oltage (v br ) level plus the voltage drop at the series impedance (res istance and inductance) of the protection device. any negative transient sign al will be clamped accordingl y. the negative transient current is flowing in the forward direction of the protection diode. the low f orward v oltage (v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the gsotxxc-ht3 clamping behaviour is bi directional and as ymmetrical ( bias ). if a higher surge current or p eak p ulse current ( i pp ) is needed, both protection diodes in the gsotxxc-ht3 can also be used in parallel in order to "double" the performance. this offers: ? double surge power = double peak pulse current (2 x i ppm ) ? halve line inductance = reduced clamping voltage ? halve line resistance = reduced clamping voltage ? double d iode c apacitance (2 x c d ) ? double r everse leakage current (2 x i r ) l1 l2 20239 1 2 3 l1 20240 1 2 3
www.vishay.com 6 document number 85825 rev. 1.7, 21-apr-08 gsot03c-ht3 to gsot36c-ht3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified gsot03c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) gsot04c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) gsot05c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 100 a v rwm 3.3 v reverse current at v r = 3.3 v i r 100 a reverse break down voltage at i r = 1 ma v br 44.6 v reverse clamping voltage at i pp = 1 a v c 5.7 7.5 v at i pp = i ppm = 30 a v c 10 12.3 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 30 a v f 4.5 v capacitance at v r = 0 v; f = 1 mhz c d 420 600 pf at v r = 1.6 v; f = 1 mhz c d 260 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 20 a v rwm 4v reverse current at v r = 4 v i r 20 a reverse break down voltage at i r = 1 ma v br 56.1 v reverse clamping voltage at i pp = 1 a v c 7.5 9 v at i pp = i ppm = 30 a v c 11.2 14.3 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 30 a v f 4.5 v capacitance at v r = 0 v; f = 1 mhz c d 310 450 pf at v r = 2 v; f = 1 mhz c d 200 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 10 a v rwm 5v reverse current at v r = 5 v i r 10 a reverse break down voltage at i r = 1 ma v br 66.8 v reverse clamping voltage at i pp = 1 a v c 78.7v at i pp = i ppm = 30 a v c 12 16 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 30 a v f 4.5 v capacitance at v r = 0 v; f = 1 mhz c d 260 350 pf at v r = 2.5 v; f = 1 mhz c d 150 pf
gsot03c-ht3 to gsot36c-ht3 document number 85825 rev. 1.7, 21-apr-08 vishay semiconductors www.vishay.com 7 for technical support, please contact: esd-protection@vishay.com gsot08c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) gsot12c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) gsot15c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 5 a v rwm 8v reverse current at v r = 8 v i r 5a reverse break down voltage at i r = 1 ma v br 910 v reverse clamping voltage at i pp = 1 a v c 10.7 13 v at i pp = i ppm = 18 a v c 15.2 19.2 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 18 a v f 3v capacitance at v r = 0 v; f = 1 mhz c d 160 250 pf at v r = 4 v; f = 1 mhz c d 80 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 1 a v rwm 12 v reverse current at v r = 12 v i r 1a reverse break down voltage at i r = 1 ma v br 13.5 15 v reverse clamping voltage at i pp = 1 a v c 15.4 18.7 v at i pp = i ppm = 12 a v c 21.2 26 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 12 a v f 2.2 v capacitance at v r = 0 v; f = 1 mhz c d 115 150 pf at v r = 6 v; f = 1 mhz c d 50 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 1 a v rwm 15 v reverse current at v r = 15 v i r 1a reverse break down voltage at i r = 1 ma v br 16.5 18 v reverse clamping voltage at i pp = 1 a v c 19.4 23.5 v at i pp = i ppm = 8 a v c 24.8 28.8 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 8 a v f 1.8 v capacitance at v r = 0 v; f = 1 mhz c d 90 120 pf at v r = 7.5 v; f = 1 mhz c d 35 pf
www.vishay.com 8 document number 85825 rev. 1.7, 21-apr-08 gsot03c-ht3 to gsot36c-ht3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com gsot24c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) gsot36c-ht3 bias mode (between pin 1 to 3 or pin 2 to 3) parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 1 a v rwm 24 v reverse current at v r = 24 v i r 1a reverse break down voltage at i r = 1 ma v br 27 30 v reverse clamping voltage at i pp = 1 a v c 34 41 v at i pp = i ppm = 5 a v c 41 47 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 5 a v f 1.4 v capacitance at v r = 0 v; f = 1 mhz c d 65 80 pf at v r = 12 v; f = 1 mhz c d 20 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 2 lines reverse stand off voltage at i r = 1 a v rwm 36 v reverse current at v r = 36 v i r 1a reverse break down voltage at i r = 1 ma v br 39 43 v reverse clamping voltage at i pp = 1 a v c 49 60 v at i pp = i ppm = 3.5 a v c 59 71 v forward clamping voltage at i pp = 1 a v f 11.2v at i pp = i ppm = 3.5 a v f 1.3 v capacitance at v r = 0 v; f = 1 mhz c d 52 65 pf at v r = 18 v; f = 1 mhz c d 12 pf
gsot03c-ht3 to gsot36c-ht3 document number 85825 rev. 1.7, 21-apr-08 vishay semiconductors www.vishay.com 9 for technical support, please contact: esd-protection@vishay.com bisy-mode (1-line bi directional sy mmetrical protection mode) if a bipolar symmetrical protection device is needed the gsotxxc-ht3 can also be used as a single line protection device. therefore pin 1 has to be connected to the signal- or data-line (l1) and pin 2 to ground (or vice versa). pin 3 must not be connected. positive and negative voltage transi ents will be clamped in the same way. the clamping current through the gsotxxc-hs3 passes one diode in forward direction and the other one in reverse direction. the c lamping v oltage ( v c ) is defined by the br eakthrough v oltage ( v br ) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series imped ances (resistances and indu ctances) of the protection device. due to the same clamping levels in positive and negative direction the gsotxxc-ht3 voltage clamping behaviour is bi directional and sy mmetrical ( bisy ). electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified gsot03c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) gsot04c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) l1 20241 1 2 3 parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 100 a v rwm 3.8 v reverse current at v r = 3.8 v i r 100 a reverse break down voltage at i r = 1 ma v br 4.5 5.3 v clamping voltage at i pp = 1 a v c 78.4v at i pp = i ppm = 30 a v c 14 16.8 v capacitance at v r = 0 v; f = 1 mhz c d 210 300 pf at v r = 1.6 v; f = 1 mhz c d 190 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 20 a v rwm 4.5 v reverse current at v r = 4.5 v i r 20 a reverse break down voltage at i r = 1 ma v br 5.5 6.8 v clamping voltage at i pp = 1 a v c 7.5 9 v at i pp = i ppm = 30 a v c 15.7 18.8 v capacitance at v r = 0 v; f = 1 mhz c d 155 225 pf at v r = 2 v; f = 1 mhz c d 135 pf
www.vishay.com 10 document number 85825 rev. 1.7, 21-apr-08 gsot03c-ht3 to gsot36c-ht3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com gsot05c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) gsot08c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) gsot12c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) gsot15c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 10 a v rwm 5.5 v reverse current at v r = 5.5 v i r 10 a reverse break down voltage at i r = 1 ma v br 6.5 7.5 v clamping voltage at i pp = 1 a v c 8.1 9.7 v at i pp = i ppm = 30 a v c 17 20.4 v capacitance at v r = 0 v; f = 1 mhz c d 130 175 pf at v r = 2.5 v; f = 1 mhz c d 100 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 5 a v rwm 8.5 v reverse current at v r = 8.5 v i r 5a reverse break down voltage at i r = 1 ma v br 9.5 10.7 v clamping voltage at i pp = 1 a v c 11.7 14 v at i pp = i ppm = 18 a v c 18.5 22.2 v capacitance at v r = 0 v; f = 1 mhz c d 80 125 pf at v r = 4 v; f = 1 mhz c d 60 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 1 a v rwm 12.5 v reverse current at v r = 12.5 v i r 1a reverse break down voltage at i r = 1 ma v br 13.5 15.7 v clamping voltage at i pp = 1 a v c 16.4 19.7 v at i pp = i ppm = 12 a v c 23.4 28.1 v capacitance at v r = 0 v; f = 1 mhz c d 58 75 pf at v r = 6 v; f = 1 mhz c d 36 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 1 a v rwm 15.5 v reverse current at v r = 15.5 v i r 1a reverse break down voltage at i r = 1 ma v br 17 18.7 v clamping voltage at i pp = 1 a v c 20.4 24.5 v at i pp = i ppm = 8 a v c 26.6 30.6 v capacitance at v r = 0 v; f = 1 mhz c d 45 60 pf at v r = 7.5 v; f = 1 mhz c d 25 pf
gsot03c-ht3 to gsot36c-ht3 document number 85825 rev. 1.7, 21-apr-08 vishay semiconductors www.vishay.com 11 for technical support, please contact: esd-protection@vishay.com gsot24c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) gsot36c-ht3 bisy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) package dimensions in millimeter s (inches): llp75-3b parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 1 a v rwm 24.5 v reverse current at v r = 24.5 v i r 1a reverse break down voltage at i r = 1 ma v br 27.5 30.7 v clamping voltage at i pp = 1 a v c 34 41 v at i pp = i ppm = 5 a v c 40 48 v capacitance at v r = 0 v; f = 1 mhz c d 33 40 pf at v r = 12 v; f = 1 mhz c d 18 pf parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of li nes which can be protected n lines 1 lines reverse stand off voltage at i r = 1 a v rwm 36.5 v reverse current at v r = 36.5 v i r 1a reverse break down voltage at i r = 1 ma v br 39.5 43.7 v clamping voltage at i pp = 1 a v c 50 60 v at i pp = i ppm = 3.5 a v c 60 72 v capacitance at v r = 0 v; f = 1 mhz c d 26 33 pf at v r = 18 v; f = 1 mhz c d 10 pf 1 8 057
www.vishay.com 12 document number 85825 rev. 1.7, 21-apr-08 gsot03c-ht3 to gsot36c-ht3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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